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The communication industry has always been a very challenging and profitable market for semiconductor companies. The new communication systems are today very demanding; they require high frequency, high degree of integration, multi-standards, low power consumption, and they have to present good performance under harsh environment. The integration and power consumption reduction of the digital part will further improve with the continued downscaling of technologies. The bottleneck for further advancement is the analog front-end. Present-day transceivers often consist of a three or four chip-set solution combined with several external components. A reduction of the external components is essential to obtain a lower cost, power consumption and weight, but it will lead to a fundamental change in the design of analog front-end architectures. The analog front-end requires a high performance technology, like GaAs or silicon bipolar transistors, with devices that can easily achieve operating frequencies in the GHz range. For a digital signal processor, a small device feature size is essential for the implementation of complex algorithms. Therefore, it appears that only the best submicron CMOS technology is suitable for a feasible and cost-effective integration of the communication systems. This last decade MOS transistors have reached amazingly high operation speed and the semiconductor community has noticed the Radio Frequency possibilities of such mainstream devices. Silicon-on-Insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency reaching cutoff frequencies close to 500 GHz for nMOSFETs and for harsh environment (high temperature, radiations) commercial applications. From its early development phase till recent years, SOI has grown from a mere scientific curiosity into a mature technology. Partially Depleted (PD) SOI is now massively serving the 45-nm digital market where it is seen as a low cost low power alternative to bulk silicon. Fully depleted (FD) devices are also widely spread as they outperform existing semiconductor technologies for extremely low power analog applications. 9

Advanced RF MOSFET´s for Microwave and Millimeter Wave Applications: RF Characterization Issues