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Increasing the electronic circuit density is a major trend in microelectronics. Lithography is the key technology for the fabrication of very large integrated circuits with smaller device sizes. Today conventional optical lithography is approaching its fundamental physical limits. Electron and ion lithographies are among various candidates capable of sub-150 nm resolution for the new generation of lithographic techniques. Nanometer scale device fabrication rules require tight control of the developed polymer resist profile. Process simulation is a key tool for optimization of the obtained lithography results. The goal of the computer simulation of the processes at electron and ion beam lithography (EBL and IBL) is the resist profile prediction of developed patterns after exposure of samples, covered by a sensitive polymer resist layer, which is sensitive to irradiation by accelerated particles. The accuracy of the simulated resist profiles strongly depend on the physical knowledge of the processes as well as on the accuracy of the process parameters. The main step of such modeling: (i) exposure process modeling (latent image) and (ii) simulation of resist developed images at electron and ion beam lithography as well as the peculiarities of the developed Monte Carlo models are described and discussed in these two chapters (part 1 and part 2).

Computer Simulation of Processes at Electron and Ion Beam Lithography, Part 1: Exposure Modeling at Electron and Ion Beam Lithography