Metal Gate Electrode and High-Dielectrics for Sub-32nm Bulk CMOS Technology: Integrating Lanthanum Oxide Capping Layer for Low Threshold-Voltage Devices Application | Zendy

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Metal Gate Electrode and High-Dielectrics for Sub-32nm Bulk CMOS Technology: Integrating Lanthanum Oxide Capping Layer for Low Threshold-Voltage Devices Application

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