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MOCVD-grown GaN n-type epilayers were implanted with 150keV Co and Cr ions at different fluences at room temperature. Co+ was implanted at 3x10 and 5×10 ions/cm2 and samples rapid-thermal-annealed at 700, 800 and 900°C for 5 minutes, while Cr+ was implanted at 3x10 ions/cm2 and annealed at 800 and 900°C for 2 minutes. Diffraction patterns of implanted samples showed satellite peaks at the lower side of the main GaN (0002) reflection and these were assigned to implantation induced-damage and the formation of Ga1−xCoxN or Ga1−xCrxN phases. The coercivity (Hc) at 5K from SQUID for Co implanted GaN at 3x10 ions/cm2 was 275 Oe and that at 5x10 ions/cm2 was 600 Oe. For Cr implanted GaN at 3x10 ions/cm2, Hc was 175 Oe. At the same dose of Cr+ and Co implanted ions, the saturation magnetization (Ms) values were almost similar. But after annealing at 900°C, the Ms value of Cr+ implanted GaN was higher than that of Co implanted at 5K. For Co+ implanted GaN, magnetization was retained up to 370K while in Cr implanted GaN, magnetization was retained above 380K. These findings are the highest reported Curie temperatures for Co+ and Cr implanted GaN diluted magnetic semiconductors.

Metal Ions Implantation‐Induced Effects in GaN Thin Films