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Functional thin films are used in various fields of our life. Many different methods are used to fabricate these films including physical vapor deposition (PVD) and chemical processes. The chemical processes can be used to manufacture thin films in a relatively cheap way, as compared to PVD methods. This chapter summarizes the procedures of the molecular precursor method (MPM), a chemical process, for fabrication of both metal oxide semiconductor Cu 2 O and metallic Cu thin films by utilizing Cu(II) complexes in coating solutions. The MPM, recently developed and reported by the present authors, represents a facile procedure for thin film fabrication of various metal oxides or phosphates. This method pertinent to the coordination chemistry and materials science including nanoscience and nanotechnology has provided various thin films of high quality. The MPM is based on the design of metal complexes in coating solutions with excellent stability, homogeneity, miscibility, coatability, etc., which are practical advantages. The metal oxides and phosphates are useful as the electron and/or ion conductors, semiconductors, dielectric materials, etc. This chapter will describe the principle and recent achievement, mainly on fabricating the p-type Cu 2 O and metallic Cu thin films of the MPM.

Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films