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In the last decade, a new architecture design such as nBn device or unipolar barrier photodiode has been proposed to achieve high operating temperature condition. This idea has also been implemented into HgCdTe ternary material system. In this chapter, we present the status of HgCdTe barrier detectors grown by metalorganic chemical vapor deposition with emphasis on numerical simulations of their properties. The device concept of a specific barrier bandgap architecture integrated with Auger suppression is a proper solution for high operating temperature infrared detectors. The device performance is comparable with state-of-the-art HgCdTe photodiodes. Theoretical modeling of the HgCdTe barrier detectors has been performed using our original numerical program developed at the Institute of Applied Physics, Military University of Technology (MUT) and the commercially available APSYS platform (Crosslight Inc.). The detector’s performance was assessed taking into account a wide spectrum of generation-recombination mechanism: Auger, Shockley-Read-Hall, and tunneling processes.

HgCdTe Mid- and Long-Wave Barrier Infrared Detectors for Higher Operating Temperature Condition