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HgCdTe heterostructures are widely applied for IR (infrared) detector constructing. Donor‐ and acceptor‐doping researches in (100) and (111) oriented HgCdTe layers grown by MOCVD have been studied. Fully doped HgCdTe heterostructures with acceptor concentration range between 1014 and 5 × 1017 cm-3 and donor concentration range between 1014 and 1 × 1018 cm-3 and without post‐grown annealing have been reported. The electrical and chemical characterizations of HgCdTe structures grown at 360°C on GaAs sub‐ strates using DIPTe have been described. Infrared photodiodes with different composi‐ tion x were constructing on the basis of obtained heterostructures enabling signal detection of any wavelength from 1 μm to above 20 μm covering SWIR, MWIR and LWIR spectral ranges. Presented experimental results show that MOCVD technology enables to grow HgCdTe structures dedicated for HOT devices.

MOCVD Grown HgCdTe Heterostructures