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Mid-infrared semiconductor lasers in the wavelength range of 2-3 μm have aroused increasing interests as they are highly desired for a wide range of applications ranging from medical diagnostics to environmental sensing. Access to this wavelength range was mainly achieved by antimony-containing compound semiconductor structures on GaSb substrates. Besides, InP-based InxGa1-xAs (x>0.53) type-I multiple quantum well laser is a promising antimony-free approach in this band. The emission wave‐ length can be tailored to the 2-3 μm band by increasing the indium composition in the quantum wells. During the demonstration of this kind of lasers, controlling the strain and keeping fair structural quality is the main obstacle. In this chapter, the route for developing this kind of lasers is reviewed. The schemes of pseudomorphic and metamorphic structures are discussed for the 2-2.5 μm and 2.5-3 μm range, respectively. In the pseudomorphic scheme, triangular quantum wells grown by digital alloy technology are applied to restrict the strain and increase the lasing wavelength. Lasers at 2.43 μm were demonstrated under continuous wave operation at room temperature. To extend the emission wavelength longer, an InPbased metamorphic template with larger lattice constant was produced and InAs quantum wells were then grown. The lasing wavelength was further increased up to 2.71 μm. The details on the gas source molecular beam epitaxial growth, device processing as well as performance characterization are presented.

InP-Based Antimony-Free MQW Lasers in 2-3 μm Band