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Efficient models are the key of successful designs. Widely used in modern wireless communication systems, active devices such as field-effect transistors (FETs) require up-todate models to achieve reliable circuit/system design especially in terms of noise performance since most of communication systems operate in noisy environments. [1]-[2]. Among existing FET modeling techniques, the full-wave modeling approach can be considered as the most reliable but is computationally expensive in terms of CPU time and memory [3]-[5]. On the other side, circuit equivalent models are fast but cannot accurately integrate EM effects. Therefore, a hybrid transistor model, called the semi-distributed model (Sliced model) has been proposed [6]. With the assumption of a quasi transverse electromagnetic (TEM) approximation, this model can be seen as a finite number of cascaded cells, each of them representing a unit transistor equivalent circuit. However, this model presents some limitations. In fact, in mm-wave frequencies, it cannot precisely take into account some EM effects that can significantly degrade the overall device behavior, like the wave propagation and the phase cancellation phenomena. To efficiently include such effects more general distributed models need to be developed. In this chapter, a new distributed FET model is proposed. In this model[7][8], each infinitely unit segment of the device electrodes was divided into two parts namely, active and passive. The passive part describes the behavior of the transistor as a set of three coupled transmission lines while the active part that can be modeled by an electrical equivalent distributed circuit whose elements are all per-unit length.

Efficient CAD Tool for Noise Modeling of RF/Microwave Field Effect Transistors