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InGaAsN is a candidate material to realize the ultrahigh efficiency lattice-matched multijunction solar cell. This material has the 1eV band gap energy and same lattice constant as GaAs or Ge substrate by controlling the In and N compositions to be 9% and 3%, respectively [1, 2]. So far, the highest conversion efficiency of the lattice-matched multi-junction solar cell is 43.5% at 418-suns which was achieved by the 3-junction solar cell, GaInP/GaAs/GaInNAs [3]. By realizing the 4-junction device, InGaP/InGaAs/InGaAsN/Ge, the efficiency is expected to be 41% at 1-sun under the AM1.5G spectrum and 51% at 500-suns under the AM1.5D spectrum [4]. In order to achieve the expected super high efficiency, the short circuit current, Jsc, under a GaAs filter has to be 17 mA/cm2 at 1-sun under AM0 conditions. However, the highest Jsc under that condition has been 10.9mA/cm2. This corresponds to the 6.2% conversion efficiency and Jsc=26.0 mA/cm2 without GaAs filters at 1-sun under AM1.5 [5]. The diffusion length of the minority carrier in this case is supposed to be much shorter than 1 μm which is required to achieve the ultrahigh efficiency. Therefore, the mobility and lifetime of the minority carrier should be improved.

GaAsN Grown by Chemical Beam Epitaxy for Solar Cell Application