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Flash memory has been leading player in the nonvolatile memories in recent ten years be‐ cause of a small cell size and a high scalability. A gate length of a flash memory has reached to 20 nm. A number of charges also have been getting smaller. a several hundred in the 20 nm device. However, a flash memory needs high operating voltage for short write time. The high operating voltage causes low durability [1, 2], and a signal due to capacitance coupling between neighbor cells becomes larger with further miniaturization [1, 2]. Therefore, lower operating voltage and stronger capacitive coupling between a gate electrode and a charge storage compare to neighbor cells are desired.

Control of Single-Hole Transition in Carbon Nanotube Transistor with Quantum Dot in Gate Insulator at Room Temperature