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Single-walled carbon nanotube (SWCNTs) can be thought of as graphene a single graphene sheet wrapped up to form a one-atom-thick cylinders. CNTs were discovered by Iijima [1] in 1991, since then the excellent charge transport properties of CNTs have been of great inter‐ est, for its great potential applications in nanoelectronics, such as high-speed field-effect transistors (FETs) [2, 3], single-electron memories [4], and chemical sensors [5]. The CNT has an atomic and electronic structure that gives it unique advantage as an FET channel. The band gap of the semiconducting SWCNT is inversely proportional to the tube diameter, which allows such tubes to be used in various different applications. CNTs display out‐ standing electrical properties such as ballistic transport or diffusive transport with long mean free path, which is of the order of a micrometer. Ballistic transport in CNTs has been experimentally demonstrated for low-bias conditions at low temperatures [6, 7]. High-per‐ formance CNT transistors operating close to the ballistic limit have also been reported [8-10]. Besides, one of the most important advantages is the CNT’s excellent transport prop‐ erties due to the high carrier mobility. The experimentally obtained carrier mobilities are of the orders 104 cm2/Vs [11, 12] so exceptional device characteristics can indeed be expected. Current transport in long metallic CNTs, however, is found to saturate at ~ 25 μA at high biases, and the saturation mechanism is attributed to phonon scattering [13]. On the other hand, for short length metallic tubes, the current is found not to saturate but to increase well beyond the above limit [14, 15].

Phonon Scattering and Electron Transport in Single Wall Carbon Nanotube