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Silicon carbide (SiC) is one of the most promising semiconducting materials for the fabrica‐ tion of high power electronic devices with extremely low loss, owing to its excellent physical properties, such as high breakdown electric field, high saturation electron drift velocity, and high thermal conductivity. Nowadays, some kinds of devices, such as SBDs, JFETs and MOSFETs have been on the market. For the fabrication of SiC devices with high yield rates, i.e., for reducing the scattering of device specification, the production of high-quality, largediameter epi-wafers with uniform thickness and electrical properties is indispensable. In or‐ der to characterize the electrical and thickness uniformity of the epi-wafers during the device process, i.e., to know how the thickness, doping concentration and mobility are dis‐ tributed over the SiC epi-layers, it is necessary to develop the characterization method that can perform the determinations of thickness and electrical properties simultaneously in a nondestructive and noncontact way.

intech ebooks

Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy