English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Scanning Tunnelling Microscopy (STM) has been being used for the investigation of the morphology and of the atomic structure of the semiconductor nanostructures extensively since early 1990-s (Medeiros-Ribeiro et al., 1998). More recently, STM in Ultra High Vacuum (UHV) has been applied also to the investigation of the spatial and energy distributions of the local density of states (LDOS) in the quantum semiconductor heterostructures. For example, CrossSectional STM (X-STM) has been applied to the visualization of the envelope wavefunctions of the quantum confined states in the GaSb/InAs(001) quantum wells (QWs) (Suzuki et al., 2007) and in the self-assembled InAs/GaAs(001) quantum dots (ODs) (Grandidier et al., 2000). Also, the surface InAs/GaAs(001) QDs grown by Molecular Beam Epitaxy (MBE) have been investigated by UHV STM in situ (Maltezopoulos et al., 2003). The peaks related to the quantum confined states in the QDs have been observed in the differential conductivity d = dIt/dVg spectra of the STM tip contact to the QDs (here It is the tip current and Vg is the gap voltage). The d(x, y) images of the ODs (x and y are the tip coordinates on the sample surface) recorded at the values of Vg corresponding to the peaks in the d(Vg) spectra correlated with the probability density patterns |(x, y)|2 where (x, y) are the lateral components of the electron quantum confined states envelope wavefunctions calculated for the pyramidal InAs/GaAs(001) ODs defined by the (101) facets (Stier et al., 1999).

Tunneling Atomic Force Microscopy of Self-Assembled In(Ga)As/GaAs Quantum Dots and Rings and of GeSi/Si(001) Nanoislands