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Lead selenide (PbSe) and lead sulfide (PbS) quantum dots (QDs) have many unique properties to make them promising materials for optoelectronic devices. Their bandgaps, ranging from 0.3~1.1eV, can be easily tuned via size control during synthesis, and their photo response in near infrared region promises their broad applications in bio-imaging [1], telecommunications [2], LEDs [3], lasers [4], photodetectors [5], and photovoltaic devices [6-8].

In-Gap State of Lead Chalcogenides Quantum Dots