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Phase change materials are characterized by the existence of at least two different phases, between which it is possible to reversibly and repeatedly switch in a very short timescale. Large variation of the electrical and optical properties occurs upon phase change. These unique properties have made phase change materials very attractive for the realization of nonvolatile electronic memories based on the concept of using the reversible amorphous-to-crystalline phase transition as writing and erasing mechanism. The two logic states are the high resistance, low reflectivity amorphous phase and the crystalline, high reflectivity, low resistance phase. The switching can be obtained either by using a laser pulse or an electric pulse.

Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications