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Grown-in microdefects degrade the electronic properties of microdevices fabricated on silicon wafers. Optimizing the number and size of grown-in microdefects is crucial to improving processing yield of microelectronic devices. Many of the advances in integratedcircuit manufacturing achieved in recent years would not have been possible without parallel advances in silicon-crystal quality and defect engineering (Yang et al., 2009). The problem of defect formation in dislocation-free silicon single crystals during their growth is a fundamental problem of physics and chemistry of silicon. In particular it is the key to solving the problem engineering applications of silicon crystals. This is connected with the transformation grown-in microdefects during the technological treatment of silicon monocrystals.

The Diffusion Model of Grown-In Microdefects Formation During Crystallization of Dislocation-Free Silicon Single Crystals