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Zinc oxide (ZnO) nanomaterials have emerged as one of the most promising materials for electronic devices such as solar cells, light-emitting devices, transistors, and sensors. The diverse structures of ZnO nanomaterials produce unique, useful, and novel characteristics that are applicable for high-performance devices. The ZnO nanorod array is a beneficial structure that has become extremely important in many applications due to its porosity, large surface area, high electron mobility, and variety of feasible techniques. The chemistry and physical tuning of its surface state, including processes such as annealing and chemical treatments, enhance its functionality and sensitivity and consequently improve the device performance. These useful characteristics of ZnO nanorod arrays enable the fabrication of ultraviolet (UV) photoconductive sensors with high responsivity and reliability. Although there are many techniques available to synthesise the ZnO nanorod arrays, solution-based methods offer many advantages, including the capacity for low-temperature processing, large-scale deposition, low cost, and excellent ZnO crystalline properties. In this chapter, the synthesis of ZnO nanorod arrays via ultrasonic-assisted sol-gel and immersion methods will be discussed for application to UV photoconductive sensors. The optical, structural, and electrical properties of deposited ZnO nanorod arrays will be reviewed, and the performance of the synthesised ZnO nanorod array-based UV photoconductive sensors will be discussed.

ZnO Nanorod Arrays Synthesised Using Ultrasonic-Assisted Sol-Gel and Immersion Methods for Ultraviolet Photoconductive Sensor Applications