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Piezoelectric nanostructures are currently of the potential interest for the development of MEMS / NEMS (Micro / Nano-Electro-Mechanical Systems). Their main applications in the biomedical domains (micro / nano bio actuators and sensors), in automobile industry (actuators and sensors) and in aeronautic industry (health control monitoring) are based on PbZr0.54Ti0.46O3 (PZT) recognized as leading material for these piezoelectric micro/nano devices.1, 2, 3, 4 The fabrication of piezoelectric nanostructures on pure PZT (or “dopedPZT”) films is frequently performed by means of Reactive Ion Etching (RIE or ICP (Inductively Coupled Plasma) –RIE with fluorine and/or chlorine gases), Reactive Ion Beam Etching (RIBE), Focused Ion Beam (FIB) Ga3+ etching and electron beam direct writing. 5, 6, 7, 8In the present study we focus our results on Ga3+ FIB etching of PZT nano structures. Typically, the obtained results show that it is possible to fabricate nanostructures with very small lateral size (50 nm on PZT films) when the films are etching in amorphous state followed by a post annealing treatment at the temperature which correspond to the perovskite formation temperature; the piezoelectric properties are similar to those obtained on un etched PZT films. Any degradation is observed. For crystallized films, the situation is completely different: no ferroelectric properties are observed after etching and the piezoelectricresponse is strongly degraded. A post annealing treatment in oxygen results in a partial recovery of the ferroelectric properties. The main goal of the present study is to evaluate the damage induced by FIB etching of PZT films: implantation of Ga3+ and film amorphisation. The damaged layer that appears on the films’ surface was thoroughly characterized in terms of the composition and charge implantation but a more detailed characterization seems to be necessary. To address the quality of the nanostructures, the measurement of local electromechanical activity via piezoelectric hysteresis loops acquisition using Piezoelectric response Force Microscopy (PFM) is certainly one of the best options. The conclusion of this work is the development of a suitable process of nano-structures manufacture without introducing piezoelectric property degradation.

Ga3+ Focused Ion Beam for Piezo Electric Nano Structuration Fabrication