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A hygrogenated amorphous silicon (a-Si:H) thin film solar cell was first reported in 1976 [Carlson, & Wronski, 1976]. Since then, intensive works have been carried out for the improvement of its performances. Attempt to increase the conversion efficiencies of the thin film solar cells, a multi junction solar cell structure was proposed and has been investigated [Yang et al., 1997; Shah et al., 1999; Green, 2003; Shah et al., 2004]. It consists of the intrinsic layers having different optical bandgaps in order to absorb the sunlight efficiently in a wide spectrum range. The density of photo-generated carriers is determined by the light absorption coefficient and the defect density of a material. The absorption coefficient of a-Si:H in a visible light region is one order magnitude higher than that of c-Si:H due to the direct transition phenomenon. Therefore, a thin a-Si:H layer absorbs sufficient photons. This is a huge advantage for the thin film based solar cell technology in which mass production should be definitely taken into account. However, a-Si:H has another aspect known as a Staebler-Wronski effect, i.e., the number of unpaired Si dangling bonds increases with light soaking, which lowers photocarrier density by decreasing carrier lifetime [Staebler & Wronski, 1977]. Indeed, conversion efficiencies of a-Si:H based solar cells deteriorate generally by 15-20 % due to this phenomenon. On the other hand, it is possible to suppress this deterioration to some extent by reducing a film thickness of a-Si:H with efficient light-trapping structures [e.g., Muller et al., 2004]. Indeed, the fabrication of the highly stabilized a-Si:H single junction solar cell by the precise optimizations of the optical properties and the i-layer thickness has been reported [Borrello et al., 2011]. Besides those intensive efforts, establishing the technique for fabricating highly stable a-Si:H films is essentially very important to extract its maximum potential for the solar cell applications.

Fabrication of the Hydrogenated Amorphous Silicon Films Exhibiting High Stability Against Light Soaking