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Professor W. Shockley, a Nobel prize winner and the ‘father’ of the transistor, predicted in the 1950s that SiC would soon replace Si in devices because of its superior material properties(Cited from Choyke, 1960). His prediction, however, has not yet come true because of the high cost of manufacturing SiC wafers. The current price of 2-inch SiC wafers is close to that of diamond jewellery rather than to that of Si wafers. Nevertheless, owing to its promising physical properties for high-power devices and for achieving significant reductions in CO2 emission, many researchers and companies are purchasing many SiC wafers(Madar, 2004; Nakamura et al., 2004). Very recently, the present authors reported a novel process for fabricating epitaxial SiC(Nishitani & Kaneko, 2008). This process has the potential to cost less and to provide SiC wafers with high crystalline quality. Here we present a new synthesis process for manufacturing SiC. In this process, the driving force for crystal growth is elucidated by considering a similarity—the coexistence of the stable and metastable phases—with the diamond synthesis process reported by Bonenkirk et al. (1959) of General Electric. In this review, the authors introduce the experimental procedures and the results of this novel process of making stable phase of SiC at first. Then they will show the speculated mechanism from the thermodynamical point of view, especially the concept of the double phase diagram and the concentration profile. In the end, understanding the phase stability ofmany polytypes of SiC, the reported phase diagrams, the difficulty of the equilibrium state achievement, and the results of the first principles calculations will be discussed.

Metastable Solvent Epitaxy of SiC, the Other Diamond Synthetics