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The thin thermally grown SiO2 plays a unique role in device fabrication of Si-VLSI Technology. The well established growth mechanisms and continuous research to grow high quality SiO2 on Si substrate has to lead the development of planner-Technology and permits the fabrication of well defined diffused or ion-implanted junctions of precisely controllable dimensions. Among the all wide bandgap semiconductors, Silicon Carbide (SiC) is the only compound semiconductor which can be thermally oxidized in the form of SiO2, similar to the silicon growth mechanism. This means that the devices which can be easily fabricated on Si substrate (Power MOSFET, IGBT, MOS controlled thyristor etc.) can also be fabricated on SiC substrate. Moreover, a good knowledge of SiO2/Si interface has been established and has to lead great progress in Silicon-Technology that can be directly applied to development of SiC-Technology. Similar to the Silicon-Technology, high quality thin SiO2 is most demanded gate oxide from the SiC based semiconductor industries to reduce the cost and process steps in device fabrication. Various oxidation processes has been adopted such as dry oxidation [1], wet oxidation [2], chemical vapour deposition (CVD) [3], and pyrogenic oxidation [4-6] in order to achieve the most suitable process to realize the SiC-based MOS structures. To develop the basic growth mechanism of SiO2 on SiC surfaces apart from the Si growth mechanisms, worldwide numbers of researchers are intensively working on the above specified problems. Since SiC is a compound material of Si and C atoms, that is why the role of C atoms during the thermal growth of SiO2 has been observed to be very crucial. Several studies [7-9] confirm the presence of C species in the thermally grown oxide, which directly affect the interface as well as dielectric properties of metal-oxide-semiconductor structures [10]. For this reason, rigorous studies on electrical behavior of thermally grown SiO2 on SiC play a fundamental role in the understanding and control of electrical characteristics of SiCbased devices. It has been reported that the growth rate of SiC polytypes is much lower than that of Si [11-13]. The rate of reaction on the surface of SiC is much slower than that of Si under the same oxidation conditions. In case of SiC, another unique phenomenon has been observed that the oxidation of SiC is a face terminated oxidation, means the both polar faces (Si and C face) have different oxidation rates [14-15]. These oxidation rates are also depend on the crystal orientation of SiC and polytypes i.e. Silicon carbide shows an anisotropic oxidation nature.

Thermal Oxidation of Silicon Carbide (SiC) – Experimentally Observed Facts