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This article represents a systematic review of the behaviour of B-site multi-element doping effect on electrical property of bismuth titanate ceramics. Bismuth titanate, Bi4Ti3O12 (BIT) is a potential candidate for high-temperature device applications due to their high dielectric constant, Curie temperature (Tc), breakdown strength, anisotropy and, low dielectric dissipation factor, therefore attracting considerable commercial interest in applications such as high temperature piezoelectric devices, memory storage and optical displays. These features make bismuth layer-structured ferroelectrics (BLSFs) attractive in the field of developing lead-free piezoelectric materials. BIT is a well-known member of the BLSFs, which can be represented by a general formula (Bi2O2)2+(Am-1BmO3m+1)2-, where A represents a mono-, di, or trivalent ion, such as La3+, Nd3+, Pr3+, Sm3+, etc., B stands for transition-metal cations like Ti4+, Nb5+, Ta5+, W6+, etc., and m is the number of BO6 octahedra in the perovskite-like layer (m=1-5) (Aurivillius, 1949; Kumar, 2001; Markovec, 2001; Nagata, 1999; Noguchi, 2000; Sugibuchi, 1975; Shimakawa, 2000; Subbarao, 1961; Shulman, 2000; Shimazu, 1980l; Takenaka, 1981). The layer structure of Bi4Ti3O12 (m=3) consists of three perovskitelike (Bi2Ti2O10)2units with a pseudo-perovskite layer structure, sandwiched between (Bi2O2)2+ layers along its crystallographic c axis. In the (Bi2Ti2O10)2units, Ti ions are enclosed by oxygen octahedra, and Bi ions occupy the spaces in the framework of octahedral (Subbarao, 1950). BIT is of interest in high-temperature piezoelectric sensors, because it remains ferroelectric up to 675 °C and offers relatively high piezoelectric property (Subbarao, 1961). However, the high leakage current and domain pinning due to defects in BIT have appeared as obstacles for further applications. The reasons for such problems are suggested due to the instability in the oxidation state of Ti ions and the volatile property of Bi during the sintering process (Nagata, 1999). Great efforts have been made to solve the high-leakage current, by incorporation of W, Nb or Ta dopants, as these can significantly decrease the conductivity in BIT (Hong, 2000; Markovec, 2001; Shulman, 1999; Takenaka, 1981; Villegas, 1999; Zhang, 2004). Unfortunately, the piezoelectric effect in the high Curie temperature BIT is relatively low, with coefficient values typically less than 20 pC N-1 found for both pure and modified Bi4Ti3O12. Thus, it is a challenge to seek a rational pathway to improve the electrical property of BIT ceramics.

B-site Multi-element Doping Effect on Electrical Property of Bismuth Titanate Ceramics