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Aluminum nitride (AlN) is a wide band material (Eg = 6.2 eV) with a wurtzite structure. It has already found practical application in microelectronics as substrate, insulator and packaging material due to combination of the uppermost qualities, such as high thermal conductivity, good dielectric properties and thermal expansion coefficient comparable with that of silicon. There are different modifications of the material used for application and investigation purposes: single crystal, powder, nanostructures, thin films and so on. AlN ceramics is one of them, it is easy to produce and to handle, thereat in the form of ceramics AlN maintains the main properties of the material. The objective of the study is investigation of luminescence properties of AlN ceramics including elucidation of luminescence centers and mechanisms as well as estimation of potential application of the material in the field of solid state dosimetry. This chapter is based on our papers devoted to luminescent and dosimetric properties of AlN ceramics published in 1998-2009 and quite recent measurements performed at low temperatures.

Luminescence Properties of AlN Ceramics and Its Potential Application for Solid State Dosimetry