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For the first time, unusual properties of solid solutions Pb1-xSnxTe:In with х≈0.24-0.29 (below, PbSnTe:In) were reported in the literature in 1979 (Vul et al., 1979; Akimov et al., 1979). Today, ample experimental data on the properties of PbSnTe:In and theoretical models to explain those properties, and also many reviews of known data for this material (Kaidanov & Ravich, 1985; Volkov et al., 2002), are available. Primary attention was focused on explanation of the following revealed features: Fermi-level pinning at the middle of the forbidden band in samples with certain compositions and indium contents, and a low conductivity of the material at temperatures Т≤20 К; a high photosensitivity of the material: PbSnTe:In readily responds to extremely low radiation fluxes, including those emitted by heated bodies whose temperature only slightly exceeds the sample temperature; long-term photosignal decay and residual conduction observed in PbSnTe:In samples after the illumination is switched off. From the literature (Herrmann & Mollmann, 1983; Vinogradov & Kucherenko, 1991) it was known that in PbSnTe:In samples cooled to temperatures below 20 K spontaneous polarization arises. In the same temperature interval the samples exhibit a pronounced (up to two orders of magnitude) decrease of static dielectric permittivity, whose dependence on temperature yields for the ferroelectric phase transition point a value Т』 = 17÷20 K. Like for the well-known isotopic ferroelectric solid solution 18 16 3 1 3 ( ) ( ) x x SrTiO SrTiO − (Mitsuru & Ruiping, 2000), for Pb1-xSnxTe:In there exists a certain critical value of x such that with less Sn the solid solution behaves as a virtual ferroelectric with a negative temperature TC while at greater values of x it behaves as an ordinary ferroelectric with temperature TC dependent on the composition x. Although the occurrence of a “metal–dielectric transition” in PbSnTe:In at temperatures 20 T K ≤ presents a widely recognized fact, manifested as Fermilevel pinning at the middle of the energy gap of PbSnTe:In and resulting in a low (almost intrinsic) concentration of charge carriers in the material, available literature tacitly assumes that in dielectric state no contact injection occurs in PbSnTe samples, and only equilibrium charge carriers define the charge transport in the material. Yet, it was firmly established in

Localized States in Narrow-Gap Ferroelectric-Semiconductor PbSnTe: Injection Currents, IR and THz Photosensitivity, Magnetic Field Effects