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In recent years, silicon photonics has been considered as a new promising technology platform for low-cost optical communications and interconnects. Silicon photonic devices can be fabricated using existing semiconductor techniques. It has the possibility to integrate optical and electronic components onto a single microchip since silicon is already used as the substrate for most integrated circuits. Silicon nanowire waveguides based on silicon-oninsulator techniques have exhibited the high-density integration of optical circuits due to the strong light confinement from its high refractive-index contrast. Nowadays, the silicon nanowire waveguides can be easily fabricated with the accuracy of nanometer and the power density is higher than that of the conventional single-mode fiber by a factor of about 1000 (Fukuda et al., 2005). Therefore, nonlinear optical effects will easily occur although a low input power is used. On the other hand, the nonlinear Kerr coefficient of silicon is still high, which strengthens the nonlinear ability of silicon nanowire waveguides. Many kinds of nonlinear effects, such as self-phase modulation, cross-phase modulation, stimulated Raman scattering, two-photon absorption (TPA), and four-wave mixing (FWM), have been observed in silicon nanowire waveguides, and have been used to realize silicon Raman lasers (Boyraz & Jalali, 2004), Raman amplifiers (Liang & Tsang, 2004), all-optical switches (Almeida et al., 2004), logical gates (Liang et al., 2006), parametric amplifiers (Foster et al., 2006), and wavelength converters (Rong et al., 2006). In particular, wavelength conversion is an essential operation in wavelength-routing wavelength division multiplexing networks and FWM in silicon nanowire waveguides has been regarded as a promising alternative due to the all-optical and strictly transparent characteristics, etc. Wavelength conversion has been realized in silicon nanowire waveguides using coherent anti-Stokes Raman scattering (Raghunathan et al., 2005) or nonresonant electronic response FWM (Lin et al, 2006). For a real-life wavelength converter, conversion efficiency and bandwidth are two important figures of merit. In addition, polarization dependency will also influence the performance of wavelength converters. Different from the wavelength conversion in optical fibers, the nonlinear losses due to TPA and TPA-induced free-carrier absorption (FCA) will greatly affect the conversion efficiency in silicon nanowire waveguides (Sang & Boyraz, 2008), especially where the FCA effect is quadratically proportional to the incident power.

Four-Wave Mixing in Silicon Nanowire Waveguides and Its Applications in Wavelength Conversion