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To observe phenomena by the image through invisible radiation to the eye is probably doubtless an old dream of humanity. The way followed to observe the invisible is to study an artificial retina constituted by a matrix of elements sensitive to radiation and to associate it with a system of acquisition and data processing. In brief a camera or a digital camera sensitive to other radiations than the visible light. The detectors are constituted of simple elementary p - n junctions realized in a semiconductor material whose height band gap is adapted to the energy of infrared photons which we wish to detect. The work of (Essaki & Tsu, 1970) caused a big interest to the study of superlattices made from alternating layers of two semiconductors. The development of molecular beam epitaxy (MBE) was successfully applied to fabricate different quantum wells and superlattices. Among them III-V superlattices [Ga

Band Structure and Magneto- Transport Properties in II-IV Nanostructures Semiconductors - Application to Infrared Detector Superlattices