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In recent years, there has been a tremendous interest in ferroelectric materials from perspective of their potential applications in electronic devices such as non-volatile random access memories (NvRAMs), pyroelectric infrared detectors and optical switches [1-4]. On account of their read-write speed, non volatility, low operating power and radiation hardness, NvFRAMs are promising candidates for substituting silicon based electrically erasable programmable read-only memories (EEPROMs) and flash EEPROMs. The materials for memory applications are required to possess the following properties: a large remanent polarization (Pr), a low coercive field (Ec) and sufficient fatigue endurance against repetitive polarization switching etc. [5]. Among ferroelectrics, lead zirconate titanate PbZr1-xTixO3 (PZT) has been investigated extensively and has been found to be the most promising material for NvFRAM applications. However, apart from Pb toxicity, PZT suffers from serious degrading problems such as fatigue, ageing and leakage current that hinder the usability of this material in devices [6-10]. Among them fatigue is an important reliability issue for NvRAM devices which is defined as a decrease in switchable polarization with increasing number of polarization reversals [11]. During the search for an alternate ferroelectric material for these applications, it was found that bismuth oxide layered structures (BLSFs) originally synthesized by Aurivillius [12] are the most suitable candidates due to their relatively high Curie temperature (Tc), low dielectric dissipation and anisotropic nature originating from their layered structure [13-15]. The Aurivillius family of layered bismuth-oxides encompasses many ferroelectric materials, a fact which was known since the pioneering work of Smolenskii [16] and Subbarao [17], more than forty years ago. SrBi2Ta2O9 (SBT), which is an n=2 member of the Aurivillius family of layered compounds, proved to be a versatile material for multifarious applications. Since Araujo et. al. [18] reported the fatigue-free behavior of SrBi2Ta2O9 (SBT), it has gained importance among Pb-free ferroelectric memory materials [19-28]. Araujo recognized the inherent advantage of BLSFs over other ferroelectric materials on account of the fact that the former have intermediate bismuth oxide layers between the ferroelectric units [29].

Enhanced Dielectric and Ferroelectric Properties of Donor (W6+, Eu3+) Substituted SBT Ferroelectric Ceramics