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We propose the equivalent circuit model including all parasitic components in input gate of sense amplifier of DDI DRAM with butting contact structure. We analysed the effect of parasitic schottky diode by using the proposed model in the operation of sense amplifier. The cause of single side fail and the temperature dependence of fail rate in DDI DRAM are due to creation of the parasitic schottky diode in input gate of sense amplifier. The parasitic schottky diode cause the voltage drop in input gate, and result in decreasing noise margin of sense amplifier. therefore single side fail rate increase.Key Words : DDI, DRAM, single side fail.. Schottky diode, Noise margin 1.  DDI(Display Driver IC)               IC(Integrated Circuits)                .      , ,           ,            ,       SOP(System on Panel)     .        ,        2010   8.22      ,         DDI      [1]. DDI IC             .                ,       (dual-poly-Si gate)

Analysis of effect of parasitic schottky diode on sense amplifier in DDI DRAM