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Abstract We fabricated 10 ㎚-thick cobalt silicide(CoSi 2 ) as a buffer layer on a p-type Si(100) substrate to investigate the possibility of GaN epitaxial growth on CoSi 2 /Si(100) substrates. We deposited 500 ㎚-GaN on the cobalt silicide buffer layer at low temperature with a PA-MBE (plasma assisted-molecular beam epitaxy) after the CoSi 2 /Si substrates were cleaned by HF solution. An optical microscopy, AFM, TEM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. For the GaN samples without HF cleaning, they showed no GaN epitaxial growth. For the GaN samples with HF cleaning, they showed 4㎛-thick GaN epitaxial growth due to surface etching of the silicide layers. Through XRD ω-scan of GaN direction, we confirmed the cyrstallinity of GaN epitaxy is 2.7° which is comparable with that of sapphire substrate. Our result implied that CoSi 2 /Si(100) substrate would be a good buffer and substrate for GaN epitaxial growth.Key Words : GaN, Epitaxy, PA-MBE, Cobalt Silicide Buffer, Silicon Substrate

GaN Epitaxy with PA-MBE on HF Cleaned Cobalt-silicide Buffer Layer