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This paper shows electrical analysis of the silicon solar cell according to the various ARC thickness using Medici program. we built a mesh structure of the solar cell that use ARC consisting of ITO(Indium-Tin-Oxide) transparent electrode, for the Medici modeling. About various oxide layer thickness of the ARC for 30 nm, 60 nm, 90 nm, changes of the I-V curve, Isc, Voc, transmittance and external collection efficiency performed according to wavelength of Incident ray.Simulation results show maximum power 22 mW/cm 2 , fill factor 0.83 in condition of 60 nm ITO thickness. Key Words : ARC, Wavelength, Medici, transmittance, External collection efficiency   IDEC(IC Design Education Center)   . *  : (hjsong@inje.ac.kr) 10 06 07  (1 10 08 06, 2 10 08 17, 3 10 10 04)  10 10 15 1.              ,     .             .     Texturing, Anti reflectance coating,  pn  . Texturing      10%    ,[1,2] Anti reflectance coating       ,            ,     .          ()               .[3]            ITO   .

Analysis of Electrical Characteristics of Silicon Solar cell according to the ARC thickness using Medici Program