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The improved resistively-heated furnace with two heaters established a vertical thermal gradient to control nucleation during AlN single crystals Physical Vapor Transport (PVT) growth on polycrystal tungsten substrates. During the high temperature (u003e 1850 °C) heating process, the reverse temperature field (i.e., the temperature difference between the sublimation zone and the crystalline zone ΔT   1850 °C) cooling was fulfilled to avoid recrystallization on grown AlN crystal. AlN single crystals made through the method were characterized by X-ray diffractions (XRD) and Raman spectroscopy.

Nucleation Control in Physical Vapor Transport Growth of AlN Single Crystals on Polycrystal Tungsten Substrates