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Department of Material Science and Engineering, Pusan National University, Busan 609-735, Korea(Received October 27, 2014 ; revised December 2, 2014 ; accepted December 2, 2014)AbstractIndium tin oxide (ITO) thin films (30 nm) were deposited on PET substrate by reactive DC magnetronsputtering using In/Sn(2, 5 wt.%) metal alloy target without intentionally substrate heating during the depositionunder different DC powers of 70 ~ 110 W. The electrical properties were estimated by Hall-effect measurementssystem. The resistivity of ITO thin film deposited using In/Sn (5 wt.%) metal alloy target at low DC powerincreased with increasing annealing time. However, they increased with increasing annealing time at highDC power. In the case of ITO (Sn 2 wt%), we can't find clear change in resistivity with increasing annealingtime. However, carrier density and mobility showed difference behavior due to change of oxygen vacancy.

Electrical Properties of ITO Thin Film Deposited by Reactive DC Magnetron Sputtering using Various Sn Concentration Target