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A one-step route was developed to fabricate (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at and revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.

Structural and Electrical Properties of Cu(In,Ga)Se2Thin Films Prepared by RF Magnetron Sputtering without Selenization

Structural and Electrical Properties of Cu(In,Ga)Se₂Thin Films Prepared by RF Magnetron Sputtering without Selenization