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The influence of annealing process in an O2 atmosphere on the photoluminescence (PL) spectra properties of ZnS nanowires has been investigated. ZnS nanowires with the diameters approximately 100 nm and the lengths a few tens micrometers were synthesized by evaporating ZnS powders on Si substrates while using an Au thin film as a catalyst. ZnS nanowires had an NBE emission band at 430 nm in the violet region. The emission intensity was improved drastically by a process in which ZnS nanowires were heat-treated at 500 o C in an O2 atmosphere for 45 minutes.

Enhancement of Photoluminescence Intensity of ZnS Nanowires by Annealing in O2

Enhancement of Photoluminescence Intensity of ZnS Nanowires by Annealing in O₂