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CdSe/ZnSequantum dot semiconductor optical amplifier is studied theoretically where the core/shell structure is discussed. Absorption and emission coefficients and noise figure are studied. The emission coefficient obtained is higher than the similar structure of InGaAs/InP. A 25dB gain is obtained . A low noise figure (5.5dB) is obtained. A high output power can be obtained. The simulated structure can be used to develop photonic integrated circuits.

CdSe/ZnSe Quantum-Dot Semiconductor Optical Amplifiers