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Porous GaP have studied and fabricated by using an argon-ion laser beam of energy 2.41 eV was to recording the Raman spectra. The peak position shifts in Raman spectra was observed at 398 cm-1 after etching. The Raman line is broad and asymmetric in comparison to the Raman line for crystalline GaP of 402 cm-1. The weak structure near 350 cm-1 is a forbidden TO phonon, which arises due to structural disorder in the material. The peak that appears near 378 cm-1 is attributed to a surface phonon mode. The surface phonon frequency depends on the nanocrystalline size, shape and dielectric constant of the surrounding medium. We have studied the surface morphology of porous layers obtained by LIE of n-type GaP (100) substrates by using a Scanning Electron Microscope (SEM). The morphology of porous GaP layers changes rapidly with laser power densities and irradiation times. As well as both the size and shape of the structure depend on the nature and concentration of etchant solution.</p

The Effect of Etchant Concentration on Surface Morphology Of Porous GaP Produced By Laser-Induced Etching