English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Possibility of development of processes of selforganization in the semiconductors of type A<sup>III</sup>B<sup>V</sup> grown up by Chohralsky method in which there are no single vacancies because all of them are combined in complexes of type shallow donor + vacancy has been shown. At small homogeneous heating of such samples these complexes break up and periodic distribution of vacancies along the sample appearances. Thus, internal isotype potential barriers are formed. Because of division of created by action of temperature the non-equilibrium carriers by these barriers synergetic current and (or) voltage generate. These theoretical ideas are confirmed by experiments on gallium arsenide doped by tellurium and gallium arsenide doped by tin

About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV