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The change of plasma conditions caused by pressure increasing can affect the change of electrical characteristic of plasma and influence in each of plasma process is done, its change can be estimated by means of voltage-current characteristics from V-I measurement and simulation of the plasma equivalent circuit model. This study is investigation of electrical characteristic of 40 kHz Capacitive Coupled Plasma (CCP) from V-I measurement were combined by simulation of the plasma circuit model, the goal study is observation of the change of electrical properties of plasma in different pressure conditions. The simulation results show that the output of circuit model in the simulation are similar with voltage-current characteristic from V-I measurement in 300 mTorr-900 mTorr pressure conditions. From the characterization, can be concluded that the electrical properties of CCP can be estimated by using the resistor and capacitor values of circuit model in the simulation to get similarity characteristic with voltage-current from V-I measurement.

applied physics research

Voltage-Current Measurement and Circuit Model Simulation to Characterize Electrical Properties of 40 kHz Capacitive Coupled Plasma (CCP) By Means of Pressure Variation