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In this paper, we present the design, fabrication and measurement of high efficiency GaN HEMT power amplifier using harmonic matching technique. In order to achieve high efficiency, harmonic load-pull simulation is performed, that is, the optimum load impedances are determined at 2 and 3 harmonic frequencies as well as at the fundamental. Then, the output matching circuit is designed based on harmonic load-pull simulation. The measurement of the fabricated power amplifier shows the linear gain of 20 dB and P1dB(1 dB gain compression point) of 33.7 dBm at 1.85 GHz. The maximum power added efficiency(PAE) of 80.9 % is achieved at the output power of 38.6 dBm, which belongs to best efficiency performance among the reported high efficiency power amplifiers. For W-CDMA input signal, the power amplifier shows a PAE of 27.8 % at the average output power of 28.4 dBm, where an ACLR (Adjacent Channel Leakage Ratio) is measured to be —38.8 dBc. Digital predistortion using polynomial fitting was implemented to linearize the power amplifiers, which allowed about 6.2 dB improvement of an ACLR performance.

High Efficiency GaN HEMT Power Amplifier Using Harmonic Matching Technique