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In the paper, the effect of the electric field on the conditions of formationand on the period of the surface superlattice of adatoms in $n$-GaAssemiconductor is investigated. It is established that in GaAs semiconductor, anincrease in the electric field strength, depending on the direction, leads toan increase or decrease of the critical temperature (the critical concentrationof adatoms), at which the formation of self-organized nanostructure ispossible. It is shown that in strongly alloyed $n$-GaAs semiconductor, anincrease of the electric field strength leads to a monotonous change (decreaseor increase depending on the direction of the electric field) of the period ofself-organized surface nanostructures of adatoms.

condensed matter physics

The effect of the electric field on the nucleation of the nanometer  periodic structure of adatoms in GaAs semiconductor under the action of laser  irradiation