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The effect of a constant electric field and donor impurity on the energiesand oscillator strengths of electron intraband quantum transitions indouble-well spherical quantum dot GaAs/Al$_{x}$Ga$_{1-x}$As/GaAs is researched.The problem is solved in the framework of the effective mass approximation andrectangular potential wells and barriers model using the method of wavefunction expansion over a complete set of electron wave functions innanostructure without electric field. It is shown that under the effect ofelectric field, the electron in the ground state tunnels from the innerpotential well into the outer one. It also influences on the oscillatorstrengths of intraband quantum transition. The binding energy of an electronwith ion impurity is obtained as a function of electric field intensity at adifferent location of impurity.

Optical properties of GaAs/Al$_{x}$Ga$_{1-x}$As/GaAs quantum dot with off-central impurity driven by electric field