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The model of spatial-temporal distribution of point defects in a three-layerstressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs considering theself-assembled deformation-diffusion interaction is constructed. Within theframework of this model, the profile of spatial-temporal distribution ofvacancies (interstitial atoms) in the stressed nanoheterosystemGaAs/In$_x$Ga$_{1 - x}$As/GaAs is calculated. It is shown that in the case of astationary state ($t > 5\tau _d^{(2)}$), the concentration of vacancies in theinhomogeneously compressed interlayer is smaller relative to the initialaverage value $N_{d0}^{(2)}$ by 16%

condensed matter physics

Spatial-temporal redistribution of point defects in three-layer stressed  nanoheterosystems within the framework of self-assembled  deformation-diffusion model