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The Hamiltonian of electrons interacting with interface phonons inthree-barrier resonant tunneling structure is established using the firstprinciples within the models of effective mass and polarization continuum.Using the Green's functions method, the temperature shifts and decay rates ofoperating electron states are calculated depending on geometric design ofthree-barrier nano-structure GaAs/Al$_{x}$Ga$_{1-x}$As which is an activeregion of quantum cascade detector. It is established that independently of thetemperature, the energy of quantum transition during the process ofelectromagnetic field absorption is a nonlinear weakly varying function of theposition of the inner barrier with respect to the outer barriers of thestructure.

condensed matter physics

The effect of interface phonons on operating electron states in  three-barrier resonant tunneling structure as an active region of quantum  cascade detector