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One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (Nd) of the active layer on the J-V curve. When the active layer thickness was varied (for N d = 8×10 17 cm -3 ) from 800 nm to 100 nm, the reverse saturation current density (J o ) changed from 3.56×10 -5 A/cm2 to 9.62×10 -11 A/cm 2 and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N d = 4×10 15 cm -3 ), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J o = 9.62×10 -11 A/cm 2 ) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

Low Reverse Saturation Current Density of Amorphous Silicon Solar Cell Due to Reduced Thickness of Active Layer