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-WeproposedAlGaN/GaNhighelectronmobilitytransistors(HEMTs)usingthermal oxidationforNiOxpassivation.Augerelectronspectroscopy,secondaryionmassspectroscopy,and pulsedIVwereusedtostudyoxidationfeatures.TheoxidationprocessdiffusedNiandOintothe AlGaNbarrierandformedNiOxonthesurface.Thebreakdownvoltageoftheproposeddevicewas 1520Vwhilethatoftheconventionaldevicewas300V.Thegateleakagecurrentoftheproposed devicewas3.55A/mmandthatoftheconventionaldevicewas1116.75A/mm.Theconventional deviceexhibitedsimilarcurrentinthegateanddrainpulsedIVanditsdrainpulsedcounterpart.The gateanddrainpulsedcurrentoftheproposeddevicewasabout56%ofthedrainpulsedcurrent.This indicatedthattheoxidationprocessmayformdeepstateshavingalowemissioncurrent,whichthen suppressestheleakagecurrent.Ourresultssuggestthattheproposedprocessissuitableforachieving highbreakdownvoltagesintheGaNbaseddevices.

High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOxPassivation

High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiO_xPassivation