English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

A stoichiometric mixture of evaporating materials for BaIn2Se4 epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, BaIn2Se4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 620 o C and 400 o C, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of BaIn2Se4 epilayers measured from Hall effect by van der Pauw method are 8.94×10 17 cm -3 and 343 cm 2 /vs at 293 K, respectively. The temperature dependence of the energy band gap of the BaIn2Se4 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T)=2.6261 eV-(4.9825×10 -3 eV/K)T 2 /(T+558 K). The crystal field and the spin-orbit splitting energies for the valence band of the BaIn2Se4 have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the states of the valence band of the BaIn2Se4/ GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the A1-, B1-exciton for n = 1 and C21-exciton peaks for n=21.

Photocurrent Study on the Splitting of the Valence Band and Growth of BaIn2Se4epilayers by Hot Wall Epitaxy

Photocurrent Study on the Splitting of the Valence Band and Growth of BaIn₂Se₄epilayers by Hot Wall Epitaxy