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The discovery of a two-dimensional electron gas (2DEG) in LaAlO 3 (LAO)/SrTiO 3 (STO) heterostructure has stimulated intenseresearch activity. We suggest a new structure model based on KNbO 3 (KNO) material. The KNO thin films were grown on TiO 2 -terminated STO substrates as a p-type structure (NbO 2 /KO/TiO 2 ) to form a two-dimensional hole gas (2DHG). The STO thin films weregrown on KNO/TiO 2 -terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of theKNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conductingbehavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were depositedon a TiO 2 -terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygenpressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. AnSTO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as toconfirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOEtreatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governedby the oxygen vacancy mechanism and the polar catastrophe mechanism.

Oxygen Vacancy Effects of Two-Dimensional Electron Gas in SrTiO3/KNbO3Hetero Structure

Oxygen Vacancy Effects of Two-Dimensional Electron Gas in SrTiO₃/KNbO₃Hetero Structure