English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We fabricated electrolyte-insulator-semiconductor (EIS) devices using a solution process and measured the sensing properties of EISdevices according to the thicknesses of sensing membrane. For high pH sensitivity and better stability properties, we used SiO 2 /HfO x (OH) layer as a sensing membrane. In this work, HfO x sensing membranes were deposited on 5 nm thick SiO 2 buffer layer by spin coaterwith thicknesses of 15, 31, 42, 55 nm, respectively. As a result, we founded that the thickness of HfO x sensing membrane affects tosensitivity and chemical stability of EIS device. Especially, the EIS device with 42 nm thick HfO x membrane showed superior sensingability in terms of pH-sensitivity, linearity, hysteresis voltage and drift rate characteristics than the other devices. In conclusion, weconfirmed that it is possible to improve the sensing ability and the chemical stability properties using optimized thickness of sensingmembrane and proper annealing process. Keywords : pH sensor, EIS, hfO

Thickness Dependence of Solution Deposited HfOxSensing Membrane for Electrolyte-Insulator-Semiconductor (EIS) Structures

Thickness Dependence of Solution Deposited HfO_xSensing Membrane for Electrolyte-Insulator-Semiconductor (EIS) Structures