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This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti//Si substrates. The 1--thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are , 2808, and 159 pC/N, respectively.

A study on the crystalline orientation and electric properties of sol-gel PZT thin film for piezoelectric sensors